| 发明名称 |
FORMING LED STRUCTURES ON SILICON FINS |
| 摘要 |
Methods of forming III-V LED structures on silicon fin templates are described. Those methods and structures may include forming an n-doped III-V layer on a silicon (111) plane of a silicon fin, forming a quantum well layer on the n-doped III-V layer, forming a p-doped III-V layer on the quantum well layer, and then forming an ohmic contact layer on the p-doped III-V layer. |
| 申请公布号 |
US2016163918(A1) |
申请公布日期 |
2016.06.09 |
| 申请号 |
US201314906542 |
申请日期 |
2013.09.27 |
| 申请人 |
Intel Corporation |
发明人 |
DASGUPTA Sansaptak;THEN Han Wui;Chau Robert S.;RADOSAVLJEVIC Marko;CHU-KUNG Benjamin;GARDNER Sanaz |
| 分类号 |
H01L33/06;H01L33/62;H01L33/20;H01L33/00;H01L33/32 |
主分类号 |
H01L33/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a light emitting diode (LED) structure comprising:
forming an n-doped III-V layer on a silicon (111) plane of a silicon fin structure; forming a quantum well layer on the p-doped III-V layer; forming a p-doped III-V layer on the quantum well layer; and forming an ohmic contact layer on the p-doped III-V layer. |
| 地址 |
Santa Clara CA US |
