发明名称 |
THIN-FILM TRANSISTOR |
摘要 |
Disclosed is a thin-film transistor. The thin-film transistor includes: a substrate; a first gate, a first gate insulation layer, a semiconductor layer, an etching stop layer, and the second gate stacked on a surface of the substrate, in which the semiconductor layer has a thickness of 200 nm-2000 nm; the etching stop layer includes a first via and a second via formed therein; and the first via and the second via are arranged to each correspond to the semiconductor layer; and a source and a drain respectively extending through the first via and the second via to connect to the semiconductor layer. The thin-film transistor has an increased ON-state current and switching speed. |
申请公布号 |
US2016163881(A1) |
申请公布日期 |
2016.06.09 |
申请号 |
US201414416767 |
申请日期 |
2014.12.22 |
申请人 |
Shenzhen China Star Optoelectronics Technology Co. Ltd. |
发明人 |
SHI Longqiang;ZENG Zhiyuan;ZHANG Hejing;HU Yutong |
分类号 |
H01L29/786;H01L29/417 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
1. A thin-film transistor, comprising:
a substrate; a first gate, a first gate insulation layer, a semiconductor layer, an etching stop layer, and a second gate stacked on a surface of the substrate, wherein the semiconductor layer has a thickness of 200 nm-2000 nm; the etching stop layer comprising a first via and a second via formed therein, the first via and the second via being arranged to each correspond to the semiconductor layer; and a source and a drain, which respectively extend through the first via and the second via to connect to the semiconductor layer. |
地址 |
Shenzhen, Guangdong CN |