发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
An embodiment is a semiconductor device which includes a first oxide semiconductor layer over a substrate having an insulating surface and including a crystalline region formed by growth from a surface of the first oxide semiconductor layer toward an inside; a second oxide semiconductor layer over the first oxide semiconductor layer; a source electrode layer and a drain electrode layer which are in contact with the second oxide semiconductor layer; a gate insulating layer covering the second oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer and in a region overlapping with the second oxide semiconductor layer. The second oxide semiconductor layer is a layer including a crystal formed by growth from the crystalline region. |
申请公布号 |
US2016163871(A1) |
申请公布日期 |
2016.06.09 |
申请号 |
US201514964950 |
申请日期 |
2015.12.10 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
YAMAZAKI Shunpei |
分类号 |
H01L29/786;H01L29/49;H01L29/04;H01L29/45;H01L29/24;H01L29/423 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Atsugi-shi JP |