THIN-FILM TRANSISTOR, METHOD OF FABRICATING THIN-FILM TRANSISTOR, AND DISPLAY DEVICE

摘要

A thin-film transistor includes: an oxide semiconductor layer having a channel region, a source region, and a drain region; a gate insulating layer disposed above the oxide semiconductor layer; a gate electrode disposed at a position that is above the gate insulating layer and opposing the channel region; and a metal oxide layer stacked on the oxide semiconductor layer and in contact with the source region and the drain region. The metal oxide layer includes, as a main component, an oxide of a second metal whose bond dissociation energy with oxygen is greater than that of a first metal included in the oxide semiconductor layer. A first concentration ratio of oxygen to the second metal in an interface layer between the metal oxide layer and the oxide semiconductor layer is greater than a second concentration ratio of the same in a bulk layer of the metal oxide layer.

主权项

1. A thin-film transistor comprising:
an oxide semiconductor layer having a channel region, a source region, and a drain region, the source region and the drain region each having a resistivity lower than a resistivity of the channel region; a gate insulating layer disposed above the oxide semiconductor layer; a gate electrode disposed at a position that is above the gate insulating layer and opposing the channel region; and a metal oxide layer disposed on the oxide semiconductor layer and in contact with the source region and the drain region, wherein the metal oxide layer includes, as a main component, an oxide of a second metal whose bond dissociation energy with oxygen is greater than a bond dissociation energy with oxygen of a first metal included in the oxide semiconductor layer, and a first concentration ratio of oxygen to the second metal in an interface layer between the metal oxide layer and the oxide semiconductor layer is greater than a second concentration ratio of oxygen to the second metal in a bulk layer of the metal oxide layer.