THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING SAME

摘要

A thin film transistor can include a substrate, a gate electrode on the substrate, a first electrode located on the substrate and surrounded by the gate electrode, a second electrode located on the first electrode and surrounded by the gate electrode, and a channel layer located between the first electrode and the second electrode. The gate electrode can include a first margin metal layer on the substrate and a second metal layer located on the first margin metal layer. A method for manufacturing the thin film transistor is also provided.

主权项

1. A method for manufacturing a thin film transistor comprising:
providing a substrate; forming, successively, a first metal layer, a second metal layer and a first photoresist layer on the substrate; patterning the first photoresist layer to form a first photoresist pattern comprising a first margin photoresist pattern and first middle photoresist pattern spaced apart from the first margin photoresist pattern; etching the first metal layer and the second metal layer to form a first margin metal layer corresponding to the first margin photoresist pattern, a second margin metal layer corresponding to the first margin photoresist pattern, a first middle metal layer corresponding to the first middle photoresist pattern, and a second middle metal layer corresponding to the first middle photoresist pattern; removing the first middle photoresist pattern; removing the second middle metal layer; removing the first margin photoresist pattern; forming a semiconductor layer covering the substrate, the second margin metal layer, and the first middle metal layer; removing a part of the semiconductor layer which covers the substrate to form a margin semiconductor layer on the second margin metal layer and a middle semiconductor layer on the first middle metal layer; forming a third metal layer covering the substrate, the margin semiconductor layer and the middle semiconductor layer; forming a second photoresist pattern on the third metal layer and corresponding to the middle semiconductor layer; removing the margin semiconductor layer and a part of the third metal layer which are not covered by the second photoresist pattern to form a third middle metal layer; and removing the second photoresist pattern.