FORMATION OF CMOS DEVICE USING CARBON NANOTUBES

摘要

A method, and the resulting structure, of making a CMOS device from carbon nanotube substrate, where a carbide contact is formed in a source drain region. The carbide is formed prior to the gate structure by reacting a glassy carbon and a metal.

主权项

1. A semiconductor structure comprising:
a carbide structure located in a source/drain region of a substrate; a carbon nanotube channel in a gate region of the substrate, wherein the carbon nanotube channel is in direct contact with the substrate; a gate located above the carbon nanotube channel in the gate region of the substrate.