TUNNEL FIELD EFFECT TRANSISTOR (TFET) WITH LATERAL OXIDATION

摘要

A vertical-mode tunnel field-effect transistor (TFET) is provided with an oxide region that may be laterally positioned relative to a source region. The oxide region operates to reduce a tunneling effect in a tunnel region underlying a drain region, during an OFF-state of the TFET. The reduction in tunneling effect results in a reduction or elimination of a flow of OFF-state leakage current between the source region and the drain region. The TFET may have components made from group III-V compound materials.

主权项

1. An electrical component, comprising:
a first layer including a source region and an oxide region, the oxide region being positioned laterally relative to the source region and the oxide region is different from a gate oxide layer; a second layer on top of and in contact with the first layer, the second layer including a tunnel region, wherein the tunnel region is positioned to overlay a portion of the source region and substantially an entirety of the oxide region; a third layer on top of a portion of the second layer, the portion of the second layer positioned at least partially on top of the oxide region, the third layer including a channel region; and a fourth layer on top of and in contact with the third layer, the fourth layer including a drain region.