| 发明名称 |
INTEGRATED CIRCUITS INCLUDING REPLACEMENT GATE STRUCTURES AND METHODS FOR FABRICATING THE SAME |
| 摘要 |
Integrated circuits and methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming sidewall spacer structures laterally adjacent to a dummy gate structure that overlies a semiconductor substrate. Additional sidewall spacer structures are formed laterally adjacent to the sidewall spacer structures and under lower portions of the sidewall spacer structures. The dummy gate structure is replaced with a replacement gate structure. |
| 申请公布号 |
US2016163824(A1) |
申请公布日期 |
2016.06.09 |
| 申请号 |
US201414560054 |
申请日期 |
2014.12.04 |
| 申请人 |
GLOBALFOUNDRIES, Inc. |
发明人 |
Shin Dong-Woon;Chi Min-Hwa;Wu Xusheng |
| 分类号 |
H01L29/66;H01L21/3105;H01L29/78;H01L21/02 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating an integrated circuit, the method comprising:
forming sidewall spacer structures laterally adjacent to a dummy gate structure that overlies a semiconductor substrate; forming additional sidewall spacer structures laterally adjacent to the sidewall spacer structures and under lower portions of the sidewall spacer structures; and replacing the dummy gate structure with a replacement gate structure. |
| 地址 |
Grand Cayman KY |
