| 摘要 |
FIELD: instrument making.SUBSTANCE: invention relates to technology for production of semiconductor devices, particularly to production of semiconductor structures with low density of defects. In method of making semiconductor structure, growing of epitaxial layer SiGeis performed at a rate of 10 nm/min, at pressure 0.133 Pa, temperature of 750 °C, SiHconsumption of 10 cm/min and ratio of concentrations of mixture GeH:SiH= 3-6 %.EFFECT: technical result is reduction of density of defects, providing processibility, improving parameters, high reliability and percentage yield.1 cl, 1 tbl |
