Actinic radiation reactor

摘要

A method and system of providing ultrapure water for semiconductor fabrication operations is provided. The water is treated by utilizing a free radical scavenging system and a free radical removal system. The free radical scavenging system can utilize actinic radiation with a free radical precursor compound, such as ammonium persulfate. The free radical removal system can comprise use of a reducing agent. The ultrapure water may be further treated by utilizing ion exchange media and degasification apparatus. A control system can be utilized to regulate addition of the precursor compound, the intensity of the actinic radiation, and addition of the reducing agent to the water.

主权项

1. An advanced oxidation ultrapure water treatment system configured to provide treated ultrapure water to a semiconductor manufacturing unit comprising:
a source of ultrapure water having a total organic carbon (TOC) concentration; an actinic radiation reactor comprising:
a vessel having an inlet fluidly connected to the source of ultrapure water, and an outlet fluidly connected to the semiconductor manufacturing unit; anda first array of ultraviolet lamps enclosed in tubes positioned within the vessel and secured at each end of each of the tubes to a wall of the vessel, the first array comprising a first set of parallel tubes and a second set of parallel tubes, each tube of the second set of parallel tubes having a respective longitudinal axis that is orthogonal to a respective longitudinal axis of each tube of the first set of parallel tubes, the first set of parallel tubes and the second set of parallel tubes positioned orthogonal to each other on a horizontal axis, and the first set of parallel tubes and the second set of parallel tubes at approximately the same elevation in the vessel; a source of a free radical precursor compound fluidly connected to the actinic radiation reactor; and a water distribution system fluidly connected to the outlet of the actinic radiation reactor to provide treated ultrapure water having a TOC concentration of less than 1 ppb to an inlet of the semiconductor manufacturing unit.