MEMORY CELL PROGRAMMING METHOD, MEMORY CONTROL CIRCUIT UNIT AND MEMORY STORAGE APPARATUS

摘要

A memory cell programming method for a rewritable non-volatile memory module is provided. The method includes grouping physical erasing units of the rewritable non-volatile memory module at least into a first area and a second area, wherein a first programming parameter set is configured initially for writing a first kind of data into the physical erasing units of the first area and the upper physical programming units of the physical erasing units of the first area are not written with data. The method also includes adjusting the first set of programming parameters to obtain a second programming parameter set, and applying the second set of programming parameters to write a second kind of data into the physical erasing units of the second area, wherein the upper physical programming units of the physical erasing units of the second area are not written with data.

主权项

1. A memory cell programming method, for a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module has a plurality of physical erasing units, and each of the physical erasing units has a plurality of physical programming units, the memory cell programming method comprising:
applying a first programming parameter set to write a first kind of data to one of the physical programming units; and applying a second programming parameter set to write a second kind of data to one of the physical programming units, wherein at least part of parameters of the first programming parameter set differ from the second programming parameter set, and the number of bits of data of a memory cell of the one of the physical programming units written with the first kind of data by applying the first programming parameter set is the same as the number of bits of data of a memory cell of the one of the physical programming units written with the second kind of data by applying the second programming parameter set.