发明名称 |
Low temperature hydrophobic direct wafer bonding |
摘要 |
A method of making an electronic device comprising the steps of: providing a plurality of wafers, each wafer comprising a bonding surface; etching one or more trenches into one or more bonding surfaces, the trenches substantially perpendicular to a preferred direction of diffusion along one or more of the bonding surfaces; rendering the bonding surfaces hydrophobic; and bonding the bonding surfaces together by direct wafer bonding. A semiconductor structure comprising a plurality of wafers, each wafer comprising a bonding surface, one or more bonding surfaces comprising one or more trenches substantially perpendicular to a preferred direction of diffusion along one or more of the bonding surfaces; and the bonding surfaces bonded together by a direct wafer bonding interface.
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申请公布号 |
US6787885(B2) |
申请公布日期 |
2004.09.07 |
申请号 |
US20020287883 |
申请日期 |
2002.11.04 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY |
发明人 |
ESSER ROBERT H.;HOBART KARL D.;KUB FRANCIS J. |
分类号 |
H01L21/18;H01L21/331;H01L23/482;(IPC1-7):H01L29/04 |
主分类号 |
H01L21/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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