发明名称 Low temperature hydrophobic direct wafer bonding
摘要 A method of making an electronic device comprising the steps of: providing a plurality of wafers, each wafer comprising a bonding surface; etching one or more trenches into one or more bonding surfaces, the trenches substantially perpendicular to a preferred direction of diffusion along one or more of the bonding surfaces; rendering the bonding surfaces hydrophobic; and bonding the bonding surfaces together by direct wafer bonding. A semiconductor structure comprising a plurality of wafers, each wafer comprising a bonding surface, one or more bonding surfaces comprising one or more trenches substantially perpendicular to a preferred direction of diffusion along one or more of the bonding surfaces; and the bonding surfaces bonded together by a direct wafer bonding interface.
申请公布号 US6787885(B2) 申请公布日期 2004.09.07
申请号 US20020287883 申请日期 2002.11.04
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY 发明人 ESSER ROBERT H.;HOBART KARL D.;KUB FRANCIS J.
分类号 H01L21/18;H01L21/331;H01L23/482;(IPC1-7):H01L29/04 主分类号 H01L21/18
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