发明名称 |
SEMICONDUCTOR STRUCTURE WITH DATA STORAGE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
Provided are a semiconductor structure and a method of forming the same. The semiconductor structure includes a substrate and a gate structure formed over the substrate. The semiconductor structure further includes a first source/drain structure and a second source/drain structure formed in the substrate adjacent to the gate structure. The semiconductor structure further includes an interlayer dielectric layer formed over the substrate to cover the gate structure, the first source/drain structure, and the second source/drain structure. The semiconductor structure further includes a first conductive structure formed in the interlayer dielectric layer over the first source/drain structure. The semiconductor structure further includes a second conductive structure formed in the interlayer dielectric layer over the second source/drain structure. In addition, the first conductive structure is in direct contact with the first source/drain structure, and the second conductive structure is not in direct contact with the second source/drain structure. |
申请公布号 |
KR20160100228(A) |
申请公布日期 |
2016.08.23 |
申请号 |
KR20160005892 |
申请日期 |
2016.01.18 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
HSIAO WOAN YUN;CHEN HUANG KUI;CHANG TZONG SHENG;KING YA CHIN;LIN CHRONG JUNG |
分类号 |
H01L29/417;H01L21/8234;H01L29/08;H01L29/423 |
主分类号 |
H01L29/417 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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