METHOD FOR MANUFACTURING EPITAXIAL WAFER

摘要

Provided is a method for manufacturing epitaxial wafers characterized by comprising: a step of performing primary polishing of polishing both sides of a silicon wafer while feeding a slurry containing first abrasive grains using a double side polishing device which includes top and bottom platens to which polishing cloths are attached and a carrier that holds the silicon wafer between the top and bottom platens; a step of performing secondary polishing of polishing both sides of the silicon wafer after the primary polishing while feeding a slurry containing second abrasive grains having a smaller average particle size than the first abrasive grains, using the double side polishing device; and a step of growing an epitaxial layer without performing one side chemical mechanical polishing on the silicon wafer surface after the secondary polishing. Consequently, a method for manufacturing epitaxial wafers is provided which allows flat epitaxial wafers with less defects to be stably manufactured.