| 摘要 |
PROBLEM TO BE SOLVED: To provide means for forming an optical active element based on III/V semiconductor on a substrate according to a Si or GaP technology.SOLUTION: A monolithic integrated circuit structure comprises a carrier layer based on doped Si or doped GaP, and a III/V semiconductor provided thereon, and has the following composition: GaInNAsPSb, where x=70-100 mol%, y=0-30 mol%, a=0.5-15 mol%, b=67.5-99.5 mol%, c=0-32.0 mol% and d=0-15 mol%; x and y always add up to 100 mol%; a, b, c and d always add up to 100 mol%. The ratio of the sum of x and y to the sum of a to d is essentially equal to 1:1. In the monolithic integrated circuit structure, the monolithic integration into an integrated circuit is performed based on a Si or GaP technology.SELECTED DRAWING: Figure 1 |
