| 摘要 |
PURPOSE:To prevent the decrease in a phase shift effect by the attenuation of the exposing light past phase shift parts by forming light shielding parts which do not completely cover the patterns which are formed on a substrate and have a phase shift function on these patterns and forming parts not covered with the light shielding parts as phase shift parts. CONSTITUTION:The light shielding parts 10C which do not completely cover the phase shift material film 12B patterns are formed on the phase shift material film 12B patterns formed on the substrate by etching. The phase shift mask having the structure in which the parts not covered with the light shielding parts 10C as the phase shift parts 12 is, therefore, obtd. and the attenuation of the exposing light by the conventional system decreases. The good phase shift mask is obtd. in this way without degrading the phase shift effect. |
