| 摘要 |
PURPOSE:To reduce the number of processes, improve the yield and improve the throughput when the aluminum system metal film of a semiconductor device is patterned into a required pattern. CONSTITUTION:A photoresist layer 3 is applied to an aluminum film 2 formed on the upper surface of an insulating substrate 1 and the photoresist layer 3 is exposed so as to have a required pattern wish a glass mask 4. While the exposed photoresist layer 3 is developed by developer (TMAH) containing 1ppm 1000ppm of chlorine ions, the foundation side aluminum film 2 is etched by the developer. As the TMAH developer functions not only as the developer of the photoresist layer 3 but also as the etchant of the aluminum film 2, the development process of the photoresist layer and the etching process using the photoresist layer can be performed in a same apparatus as one process. |
