METHOD OF MANUFACTURING THREE-DIMENSIONAL METAL-INSULATOR-METAL CAPACITOR FOR DYNAMIC RANDOM ACCESS MEMORY(DRAM) AND FERROELECTRIC RANDOM ACCESS MEMORY(FERAM)

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a metal-insulator-metal(MIM) capacitor provided with an insulator having a high dielectric constant or a ferroelectric interelectrode film conformable to a double damascene modus.

SOLUTION: A method of integrating the MIM by the double damascene modus comprises the steps of: forming a first plane insulating layer 20 and depositing an etching stop layer 22 and a second insulating layer 24; etching a capacitor node contacts opening 1 against a substrate; and etching a first recess 2 against the etching stop layer 22. A conductive layer 26 is filled in the contacts opening and the first recess by using the double damascene modus. A second recess 3 is formed around the capacitor node contacts on the second insulating layer. A first conformation metal layer 28, an interelectrode dielectric layer 30 and a second metal layer 32 are deposited and simultaneously patterned to form a capacitor upward the node contacts. The second recess increases a capacitor area, while patterning the metal layer, resulting in decreased treatment step.

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