发明名称 |
Method for manufacturing device substrate with metal back-gate and structure formed thereby |
摘要 |
A method (and resultant structure) of forming a semiconductor device, includes forming a metal-back-gate over a substrate and a metal back-gate, forming a passivation layer on the metal back-gate to prevent the metal back-gate from reacting with radical species, and providing an intermediate gluing layer between the substrate and the metal back-gate to enhance adhesion.
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申请公布号 |
US6797604(B2) |
申请公布日期 |
2004.09.28 |
申请号 |
US20010817120 |
申请日期 |
2001.03.27 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHAN KEVIN K.;HUANG LIJUAN;MCFEELY FENTON R.;SOLOMON PAUL M.;WONG HON-SUM PHILIP |
分类号 |
H01L21/336;H01L21/762;H01L29/786;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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