Solid-state image pick-up device and method for manufacturing the same

摘要

A solid-state image pick-up device having a structure in which the amount of transferred charges is not reduced in a vertical CCD portion even if a pixel portion is made finer, and a method for manufacturing the solid-state image pick-up device are provided. A first p-type well(2)and a second p-type well (3)are formed on an N (100) silicon substrate(1). A vertical CCD n<+> layer (4)is formed in the second p-type well (3). Then, impurity ions are implanted into a surface layer of the N (100) silicon substrate(1)including an upper layer portion of the vertical CCD n<+> layer(4) to form a p<-> layer(5). An isolating portion(5a) for isolating photodiode portions (8, 9) from the vertical CCD n<+> layer (4)and a read control portion(5b)for controlling the read of charges from the photodiode n layer(108) are simultaneously formed on a portion adjacent to the vertical CCD n<+> layer(4). <IMAGE>