发明名称 |
Silicon carbide schottky barrier diode and method of making |
摘要 |
A Schottky barrier diode and process of making is disclosed. The process forms a metal contact pattern in masked areas on a silicon carbide wafer. A preferred embodiment includes on insulating layer that is etched in the windows of the mask. An inert edge termination is implanted into the wafer beneath the oxide layer and adjacent the metal contacts to improve reliability. A further oxide layer may be added to improve surface resistance to physical damage.
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申请公布号 |
US6797586(B2) |
申请公布日期 |
2004.09.28 |
申请号 |
US20010894084 |
申请日期 |
2001.06.28 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
DEV ALOK |
分类号 |
H01L21/329;H01L29/24;H01L29/47;H01L29/872;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/329 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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