发明名称 Exposure tool and method capable of correcting high (N-TH) order light exposure errors depending upon an interfield coordinate
摘要 A light exposure tool of the present invention is so structured as to enable the correction of a linear intrafield error of a shot and of a higher-order intrafield error of the shot depending upon an interfield of a wafer. The light exposure tool comprises a reticle having a written circuit pattern, a reticle stage having the reticle placed on it, a reticle XY stage drive controller, a reticle stage position measuring mechanism, a wafer stage having a semiconductor wafer placed on it, the semiconductor wafer having a plurality of alignment marks formed on it for position identification, a wafer XY stage drive controller, a wafer stage position measuring mechanism, a projection optical mechanism for projecting the circuit pattern of the reticle onto the wafer to create a shot, an alignment mechanism for detecting positions of the alignment marks 9 and setting the reticle and wafer in a desired position, a calculation device, a shot rotation adjusting controller, and an isotropic magnification controller. At a time of light exposures by the projection optical mechanism on the wafer, a per-exposure systematic error of at least one of a rotation error, magnification error and skew error is approximated with an n-th order function Ls (x, y) in an interfield coordinate (x, y) of the wafer to control the alignment mechanism in accordance with the function Ls (x, y) and to correct the per-exposure systematic error depending upon the interfield coordinate of the wafer.
申请公布号 US6008880(A) 申请公布日期 1999.12.28
申请号 US19970821447 申请日期 1997.03.21
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 HIGASHIKI, TATSUHIKO;ASANUMA, KEITA
分类号 G03F7/20;G03F9/00;H01L21/027;(IPC1-7):G01B11/26;G03B27/42 主分类号 G03F7/20
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