发明名称 GAIN-CLAMPED SEMICONDUCTOR LIGHT AMPLIFIER
摘要 <P>PROBLEM TO BE SOLVED: To provide a gain-clamped semiconductor light amplifier which can suppress the impairment of signal waveforms accompanying gain saturation and a crosstalk between channels, and which can obtain saturation output as high as that of an EDFA. <P>SOLUTION: A pair of DBR regions 2 and 3 are formed with a gain region 1 for amplifying guided-wave light between them. Part of a waveguide of the gain region 1 comprises an MMI waveguide 11. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004281656(A) 申请公布日期 2004.10.07
申请号 JP20030070075 申请日期 2003.03.14
申请人 NEC CORP 发明人 HATAKEYAMA MASARU
分类号 H01S5/50;H01S5/042 主分类号 H01S5/50
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