摘要 |
A nonvolatile semiconductor memory device includes memory cell, charge buildup damage reducer and damage reducer controller. The memory cell includes floating and control gates formed over a semiconductor substrate. The damage reducer is connected to the control gate. The controller is connected to the damage reducer. The damage reducer controls a potential level at the control gate so that the potential level falls within a predetermined voltage range even if charge buildup occurs in the control gate during a metallization process. And the controller allows no current to flow through the damage reducer while the memory cell is being written, read or erased.
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