| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the rectifying efficiency of a booster circuit, by constituting the first rectifying section of the circuit of an insulated-gate field-effect transistor which is turned on when a second booster section does not output and turned off when the section outputs, and the second rectifying section of the circuit of an insulated-gate filed-effect transistor which is turned on when a first booster section does not output and turned off when the section outputs. SOLUTION: The source, gate, and drain of a pMOS transistor (pMOS) 38 of a rectifying section 19 are respectively connected to an electrode 35A of a capacitor 35, an electrode 37A of a capacitor 37, and a boosted-voltage output terminal 21. In addition, the source gate, and drain of the pMOS 39 of another rectifying section 20 are respectively connected to the electrodes 37A and 35A and terminal 21. A booster circuit is provided with the rectifying section 19 composed of the pMOS 38, the turning on/off of which is controlled by the voltage V37A at the electrode 37A of the capacitor 37, and the rectifying section 20 composed of the pMOS 39, the turning on/off of which is controlled by the voltage V35A at the electrode 35A of the capacitor 35. Therefore, the rectifying efficiency of the boosting circuit can be improved by preventing the occurrence of voltage drops in the rectifying sections 19 and 20 without increasing the number of processes.</p> |
