| 摘要 |
The semiconductor device comprises: an insulation film 72 having a contact hole 74 which reaches a substrate 10 formed in; an interconnection layer 78 connected to the substrate 10 through the contact hole 74; a blocking layer 80 formed of the same conducting layer as the interconnection layer 78; an insulation film 82 formed on the insulation film 72; and fuses 88 formed on the insulation film 82 in a region where the blocking layer formed. This structure of the semiconductor device makes it possible that the blocking layer 80 for restraining the laser ablation to be formed without complicating the conventional semiconductor device fabrication steps. |
