PHASE CHANGING MATERIAL, PHASE CHANGE RANDOM ACCESS MEMORY COMPRISING THE SAME AND METHODS OF OPERATING THE SAME

摘要

A phase changing material, a phase changing memory comprising the same, and a method for operating the same are provided to reduce the size of a transistor and to increase the level of integration of PRAM(Phase changing Random Access Memory) by lowering reset current. A phase changing memory includes a switching element and a storage node connected to the switching element. The storage node includes a first electrode(52), a phase changing layer(60), and a second electrode(62). The phase changing layer is formed by doping Ge into an InSbTe compound. The Ge of the phase changing layer is equal to or less than 10 atom percent. The InSbTe compound is formed with In of 20 to 50 atom percent, Sb of 10 to 20 atom percent, and Te of 30 to 55 atom percent.