| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing method of a sapphire wafer (substrate) restraining growth of a pit in correspondence with a transitional defect. <P>SOLUTION: The polishing method is to specular-polish the sapphire wafer (substrate) reared under a Czochralski method with colloidal silica as a polishing liquid and constitutes its characteristic feature that the content of silica in the colloidal silica is adjusted to be 35 to 50 wt.%. The surface of the sapphire wafer is specular-polished which is acquired from crystal reared under the Czochralski method with no pit since the colloidal silica the content of the silica of which is adjusted to be 35 to 50 wt.% is applied as the polishing liquid under this polishing method, and consequently, a favorable epitaxial film is provided by using the sapphire wafer as a substrate. <P>COPYRIGHT: (C)2008,JPO&INPIT |
