| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method thereof wherein the semiconductor device can be miniaturized and a multilayer semiconductor device obtained by layering the semiconductor devices can be miniaturized. <P>SOLUTION: The semiconductor device includes a semiconductor chip (12), a wiring layer (40) electrically connected to the semiconductor chip (12), a connection electrode (44) having a stud bump as a through-electrode (42) provided on the top face of a first land electrode (34) constituting the wiring layer (40), and a sealing resin (16) penetrated by the connection electrode (44) and for sealing the semiconductor chip (12). The top face of the connection electrode (44) is provided above the top face of the sealing resin (16). The multilayer semiconductor device is obtained by layering the semiconductor devices, and the manufacturing methods for them are also provided. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
