CRYSTALLINE SILICON SOLAR CELL AND MANUFACTURING METHOD AND SYSTEM THEREOF

摘要

A method and system for manufacturing the crystalline silicon solar cell is provided to perform the ion doping by using the plasma and to shorten the doping time by controlling the PN junction depth. The crystalline silicon substrate of the first conductivity type is prepared. The first conductivity type doped layer having the high concentration more than one side of the substrate is formed(ST120). The second conductive type doped layer is formed in the other side of the substrate(ST130). The film having the uneven structure in the outer surface of the second conductive type doped layer is formed. The first electrode is formed outside the first conductivity type doped layer. The second electrode is formed outside the film formed in a step for forming the second conductive type doped layer.