Semiconductor device and method of manufacturing same

摘要

A FET is formed on a semiconductor substrate, a curved surface having a radius of curvature is formed on an upper end of an insulation, a portion of a first electrode is exposed corresponding to the curved surface to form an inclined surface, and a region defining a luminescent region is subjected to etching to expose the first electrode. Luminescence emitted from an organic chemical compound layer is reflected by the inclined surface of the first electrode to increase a total quantity of luminescence taken out in a certain direction.

主权项

1. A method for manufacturing a display device comprising the steps of:
forming a transistor, the transistor comprising a channel formation region in a single crystal semiconductor substrate; forming a first insulating layer over the transistor; forming a first electrode electrically connected to the transistor over the first insulating layer; forming a second insulating layer over the first electrode; etching the second insulating layer and the first electrode so that the first electrode has a first region and a second region; forming an EL layer over the first electrode and the second insulating layer; and forming a second electrode over the EL layer, wherein the first region of the first electrode is covered with the second insulating layer, wherein the second region of the first electrode is exposed from the second insulating layer, and wherein a thickness of the first region of the first electrode is larger than a thickness of the second region of the first electrode.