Integrated phase change switch

摘要

Various methods and devices that involve phase change material (PCM) switches are disclosed. An exemplary integrated circuit comprises an active layer with a plurality of field effect transistor (FET) channels for a plurality of FETs. The integrated circuit also comprises an interconnect layer comprising a plurality of conductive interconnects. The plurality of conductive interconnects couple the plurality of field effect transistors. The integrated circuit also comprises an insulator layer covering at least a portion of the interconnect layer. The integrated circuit also comprises a channel of a radio-frequency (RF) PCM switch. The channel of the RF PCM switch is formed on the insulator layer.

主权项

1. An integrated circuit comprising:
an active layer comprising a plurality of field effect transistor channels for a plurality of field effect transistors; an interconnect layer comprising a plurality of conductive interconnects, wherein the plurality of conductive interconnects couple the plurality of field effect transistors; an insulator layer covering at least a portion of the interconnect layer; and a channel of a radio-frequency phase change material switch, wherein the channel of the radio-frequency phase change material switch is formed on the insulator layer.