| 发明名称 | Light emitting diode and method of fabricating the same | ||
| 摘要 | A light emitting diode and a method of fabricating the same, the light emitting diode including: a gallium nitride-based compound semiconductor layer; a first metal layer including Mg and disposed in the form of islands that are in ohmic contact with the gallium nitride-based compound semiconductor layer; a second metal layer including Ni, covering the first metal layer, and contacting the gallium nitride-based compound semiconductor layer between the islands of the first metal layer; and a reflective metal layer covering the second metal layer. | ||
| 申请公布号 | US9362458(B2) | 申请公布日期 | 2016.06.07 |
| 申请号 | US201414474982 | 申请日期 | 2014.09.02 |
| 申请人 | Seoul Viosys Co., Ltd. | 发明人 | Park Ju Yong;You Jong Kyun;Kim Chang Yeon |
| 分类号 | H01L33/00;H01L33/40;H01L33/32;H01L33/38 | 主分类号 | H01L33/00 |
| 代理机构 | H.C. Park & Associates, PLC | 代理人 | H.C. Park & Associates, PLC |
| 主权项 | 1. A light emitting diode, comprising: a gallium nitride-based compound semiconductor layer; a first metal layer disposed in the form of islands comprising Mg that are in ohmic contact with the gallium nitride-based compound semiconductor layer; a second metal layer comprising Ni, covering the first metal layer, and contacting the gallium nitride-based compound semiconductor layer between the islands of the first metal layer; and a reflective metal layer covering the second metal layer. | ||
| 地址 | Ansan-si KR | ||