Near-infrared light-emitting diode and method for manufacturing the same

摘要

The present invention relates generally to a near-infrared light-emitting diode (LED) and the method for manufacturing the same. When preparing the light-emitting layer of the near-infrared LED according to the present invention, the CsSnXX′2 solution is coated on the substrate having the hole transport layer. Then, by a drying process, the solvent is moved away and the CsSnXX′2 solution is solidified, crystallized to CsSnXX′2 in the perovskite structure, which is used as the light-emitting layer of the near-infrared LED and emits near infrared. X and X′ are identical or different halogen elements. In addition, according to the present invention, lead can be used to replace a part of tin. By adjusting the ratio of lead and tin or adopting different combination of halogen elements, the wavelength of the generated near infrared varies.

主权项

1. A method for manufacturing a near-infrared light-emitting diode comprising a light-emitting layer, characterized in that the formation of said light-emitting layer comprising steps of:
mixing a first powder, a second powder, and a solvent for forming a CsSnXX′2 solution, said first powder being CsX, said second powder being SnX′2, and X and X′ are halogen elements, the solvent is a mixture of methoxyactonitrile, dimethylformamide, and acetonitrile; coating said CsSnXX′2 solution on a substrate; and drying said CsSnXX′2 solution, and said CsSnXX′2 solution thus solidified and crystallized to CsSnXX′2 in the perovskite structure and forming said light-emitting layer.