| 发明名称 | Light-emitting device | ||
| 摘要 | A light emitting device comprising a plurality of current spreading layers including a first P doped layer, a first N doped layer and a second P doped layer, wherein the N doped layer having a doping level and thickness configured for substantial depletion or full depletion. | ||
| 申请公布号 | US9362445(B2) | 申请公布日期 | 2016.06.07 |
| 申请号 | US201314409340 | 申请日期 | 2013.05.30 |
| 申请人 | Nanyang Technological University | 发明人 | Zhang Zi-Hui;Tan Swee Tiam;Sun Xiaowei;Demir Hilmi Volkan |
| 分类号 | H01L27/15;H01L33/00;H01L33/04;H01L33/14;H01L33/28;H01L33/30;H01L33/32;H01L33/40 | 主分类号 | H01L27/15 |
| 代理机构 | Seed IP Law Group PLLC | 代理人 | Seed IP Law Group PLLC |
| 主权项 | 1. A light emitting device comprising: an electron injecting layer; a hole injecting layer; and an active layer sandwiched between the electron injecting layer and the hole injecting layer, wherein: the hole injecting layer comprises a plurality of current spreading layers, the plurality of current spreading layers including a first P doped layer, a first N doped layer and a second P doped layer, and the first N doped layer has a doping level and thickness configured for substantial depletion or full depletion. | ||
| 地址 | Singapore SG | ||