| 发明名称 |
INTEGRATED SUPERCONDUCTOR DEVICE AND METHOD OF FABRICATION |
| 摘要 |
In one embodiment, a method to form a superconductor device includes depositing a crystalline layer having a preferred crystallographic orientation on a substrate and forming an oriented superconductor layer comprising an oriented superconductor material on the crystalline layer. A metallic layer is formed on the superconductor layer and a mask is provided proximate the substrate to define a protected portion of the oriented superconductor layer and an exposed portion of the oriented superconductor layer. The exposed portion of the oriented superconductor layer is removed without etching the protected portion of the oriented superconductor layer. |
| 申请公布号 |
US2016163424(A1) |
申请公布日期 |
2016.06.09 |
| 申请号 |
US201414163790 |
申请日期 |
2014.01.24 |
| 申请人 |
Varian Semiconductor Equipment Associated, Inc. |
发明人 |
Wang Connie P.;Murphy Paul;Sullivan Paul |
| 分类号 |
H01B12/02;H01B13/00 |
主分类号 |
H01B12/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method to form a superconductor device, comprising:
depositing a crystalline layer having a preferred crystallographic orientation on a substrate; forming an oriented superconductor layer comprising an oriented superconductor material on the crystalline layer; forming a metallic layer on the superconductor layer; providing a mask proximate the substrate to define a protected portion of the oriented superconductor layer and an exposed portion of the oriented superconductor layer; and removing the exposed portion of the oriented superconductor layer without etching the protected portion of the oriented superconductor layer. |
| 地址 |
Gloucester MA US |
