| 摘要 |
PROBLEM TO BE SOLVED: To provide a quantum dot solar cell which has a p-i-n structure including an i layer containing nanoparticles arranged therein with regularity and is excellent in photoelectric conversion efficiency.SOLUTION: The quantum dot solar cell has a p-i-n structure including an i layer, a p-type semiconductor layer and an n-type semiconductor layer, the i layer comprising a nano-heterostructure where particulate inorganic components having an average particle size of 2-50 nm and a degree of dispersion of particle size of 1.2 or less and generating charges with light irradiation are arranged three-dimensionally and periodically in a matrix inorganic component comprising an intrinsic semiconductor material in a state of an average distance between particles of 2-50 nm and a degree of dispersion of distance between particles of 1.2 or less. |
