| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor device and a manufacturing method of the same, which inhibits generation of a micro-trench shape when a MIS structure using AlOand the like as a gate insulation film is manufactured by a gate first process.SOLUTION: A compound semiconductor device comprises a second insulation film 17 which is provided via a first insulation film 16, on a surface of an end of a carrier supply layer 13 of a nitride semiconductor adjacent to a source electrode and a drain electrode, and which becomes a gate insulation film having a dielectric constant higher than that of the first insulation film 16.SELECTED DRAWING: Figure 1 |
