发明名称 SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATING METHOD THEREOF TO IMPROVE LIGHT EMITTING EFFICIENCY
摘要 PURPOSE: A semiconductor light emitting device is provided to improve light emitting efficiency by diffracting light at an angle of no total reflection and by remarkably increasing light extraction efficiency of the light extracted to the outside of a semiconductor device. CONSTITUTION: A semiconductor multilayered layer contains nitride, including an active layer(3). A transparent layer is formed on the semiconductor multilayered layer and roughness of a two-dimensional periodic structure is formed on the upper surface of the transparent layer. The light from the active layer is diffracted on the roughness to be induced to the outside of the semiconductor multilayered layer.
申请公布号 KR20040090465(A) 申请公布日期 2004.10.25
申请号 KR20040025575 申请日期 2004.04.14
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 ORITA KENJI
分类号 H01L33/20;H01L33/38;H01L33/42;(IPC1-7):H01L33/00 主分类号 H01L33/20
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