发明名称 |
Semiconductor integrated circuit device |
摘要 |
A semiconductor integrated circuit device that has a high-voltage analog switch circuit and is operable at a low power-supply voltage, and which has a first high-voltage MOSFET HN1, a second high-voltage MOSFET, and a first floating gate voltage control circuit. The first floating gate voltage control circuit operates at a voltage of 5 V or lower, and when turning on the first high-voltage MOSFET and the second high-voltage MOSFET, the first floating gate voltage control circuit sets a voltage in the source terminal of the first high-voltage MOSFET as a reference voltage, adds a floating voltage corresponding to the power-supply voltage to the reference voltage, and supplies the added voltage to the gate terminals of the first high-voltage MOSFET and the second high-voltage MOSFET. |
申请公布号 |
US9455711(B2) |
申请公布日期 |
2016.09.27 |
申请号 |
US201514806940 |
申请日期 |
2015.07.23 |
申请人 |
Hitachi, Ltd. |
发明人 |
Kubota Shunsuke;Yoshizawa Hiroyasu;Li Na;Hayashi Yoshihiro;Odawara Tatsuya |
分类号 |
H03K17/687;H03K19/00;H03K5/08;H03K5/003 |
主分类号 |
H03K17/687 |
代理机构 |
Miles & Stockbridge P.C. |
代理人 |
Miles & Stockbridge P.C. |
主权项 |
1. A semiconductor integrated circuit device, including a high-voltage MOSFET in a semiconductor region arranged on a main surface of a semiconductor substrate via an insulating substrate, the semiconductor integrated circuit device comprising:
a first high-voltage MOSFET of a first conductive type having a source terminal, a drain terminal, and a gate terminal; a second high-voltage MOSFET of the first conductive type having a source terminal connected to the source terminal of the first high-voltage MOSFET, a gate terminal connected to the gate terminal of the first high-voltage MOSFET, and a drain terminal; and a first floating gate voltage control circuit configured to operate at a voltage within the range between a voltage exceeding a ground voltage and a voltage of 5 V or lower as a power-supply voltage and control on/off states of the first high-voltage MOSFET and the second high-voltage MOSFET according to a first control signal, the first floating gate voltage control circuit being connected to a source terminal of the first high-voltage MOSFET and a gate terminal of the first high-voltage MOSFET, and when turning on the first high-voltage MOSFET and the second high-voltage MOSFET, the first floating gate voltage control circuit setting a voltage in the source terminal of the first high-voltage MOSFET as a reference voltage, adding a floating voltage corresponding to the power-supply voltage to the reference voltage, and supplying the floating voltage to the gate terminals of the first high-voltage MOSFET and the second high-voltage MOSFET. |
地址 |
Tokyo JP |