发明名称 |
Method for integrating compound semiconductor with substrate of high thermal conductivity |
摘要 |
A method for integrating a compound semiconductor with a substrate of high thermal conductivity is provided. The present invention employs a metal of low melting point, which is in the liquid state at low temperature (about 200° C.), to form a bonding layer. The method includes the step of providing a compound semiconductor structure, which includes a compound semiconductor substrate and an epitaxial layer thereon. Then, a first bonding layer is formed on the epitaxial layer. A substrate of thermal conductivity greater than that of the compound semiconductor substrate is selected. Then, a second bonding layer is formed on the substrate. The first bonding layer and the second bonding layer are pressed to form an alloy layer at low temperature.
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申请公布号 |
US6812067(B2) |
申请公布日期 |
2004.11.02 |
申请号 |
US20020316088 |
申请日期 |
2002.12.11 |
申请人 |
UNITED EPITAXY COMPANY, LTD. |
发明人 |
CHEN TZER-PERNG;CHANG CHIH-SUNG;YANG KUANG-NENG |
分类号 |
H01L21/44;H01L21/58;H01L21/762;H01L31/0328;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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