| 摘要 |
PROBLEM TO BE SOLVED: To provide a production method of a gas barrier film showing high gas barrier performance.SOLUTION: In a production method of a gas barrier film comprising a SiOfilm, when forming a gas barrier film by PECVD method using an organic silane compound and oxygen as raw materials, following conditions are satisfied, namely, a power density of a RF power source 6 for plasma arc is 2.0-100 W/cm, and assuming that a flow rate of the organic silane compound is X and a flow rate of oxygen is Y, the flow rate ratio Y/X is 10-100.SELECTED DRAWING: Figure 1 |
