发明名称 ION BEAM IRRADIATION APPARATUS AND ION BEAM IRRADIATION METHOD
摘要 The purpose of the present invention is to enable irradiation of the whole surface of a substrate with an ion beam and to shorten the time period required for processing the substrate even when the substrate is scanned and rotated. This ion beam irradiation apparatus is provided with: a rotation mechanism (10) that rotates a holder (8) housed in a vacuum container (4), and a substrate (6) held thereby, about the central portions thereof; and a scanning mechanism (14) that mechanically scans the holder (8), the substrate (6), and the rotation mechanism (10). The ion beam irradiation apparatus is further provided with: an ion beam supply unit (18) that emits, with respect to the substrate (6) on the holder (8), an ion beam (28) of which the size at the location of the substrate (6) is larger than a dimension that includes the substrate (6) and an area in which the substrate (6) is to be scanned; and a control device (50) having a function of controlling the rotation mechanism (10) and the scanning mechanism (14) to rotate and scan the substrate (6) within the irradiation area of the ion beam (28), and irradiating the whole surface of the substrate (6) with the ion beam (28).
申请公布号 WO2016171262(A1) 申请公布日期 2016.10.27
申请号 WO2016JP62798 申请日期 2016.04.22
申请人 NISSIN ELECTRIC CO., LTD. 发明人 INAMI, Hiroshi;MIKAMI, Takashi;DAIMARU, Tomohiro;NAGAMACHI, Satoru
分类号 H01J37/30;H01J37/305;H01J37/317 主分类号 H01J37/30
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