发明名称 Marked single-crystal III-V group compound semiconductor wafer
摘要 In a rectangular, square or other shaped single-crystal wafer of a III-V group compound semiconductor, one corner of the wafer is cut off, provided with a marking, or the wafer has a part of the original shape of the grown single-crystal ingot left intact on one side of the wafer. With the wafers thus formed, it can be distinguished between the front and back sides of the wafer, or also the direction in which a V groove etch is to occur can be identified.
申请公布号 US4632884(A) 申请公布日期 1986.12.30
申请号 US19840672882 申请日期 1984.11.19
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 SHIKATANI, OSAMU;YAMAGUCHI, JUN
分类号 H01L21/02;H01L23/544;H01L29/06;(IPC1-7):H01L21/304 主分类号 H01L21/02
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