发明名称 |
Marked single-crystal III-V group compound semiconductor wafer |
摘要 |
In a rectangular, square or other shaped single-crystal wafer of a III-V group compound semiconductor, one corner of the wafer is cut off, provided with a marking, or the wafer has a part of the original shape of the grown single-crystal ingot left intact on one side of the wafer. With the wafers thus formed, it can be distinguished between the front and back sides of the wafer, or also the direction in which a V groove etch is to occur can be identified.
|
申请公布号 |
US4632884(A) |
申请公布日期 |
1986.12.30 |
申请号 |
US19840672882 |
申请日期 |
1984.11.19 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
SHIKATANI, OSAMU;YAMAGUCHI, JUN |
分类号 |
H01L21/02;H01L23/544;H01L29/06;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|