发明名称 |
Process for preventing melt-back in the production of aluminum-containing laser devices |
摘要 |
A process for the production of semiconductor devices includes: (1) forming a thin semiconductor film containing no aluminum on a first semiconductor layer containing aluminum that is disposed on a substrate one or more (2) forming channels on said thin semiconductor film in such a manner that the channel or channels reach or go through said first semiconductor layer to expose a portion of said substrate, resulting in a channelled substrate for succeeding crystal growth thereon, and (3) producing by epitaxial growth crystalline layers on said channelled substrate by the use of a crystal growth solution having a supersaturation which is high enough to prevent said first semiconductor layer from undergoing meltback.
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申请公布号 |
US4632709(A) |
申请公布日期 |
1986.12.30 |
申请号 |
US19850781707 |
申请日期 |
1985.09.30 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
TANEYA, MOTOTAKA;MATSUI, SADAYOSHI;MATSUMOTO, MITSUHIRO;HAYASHI, HIROSHI |
分类号 |
H01L21/20;H01L21/208;H01S5/00;(IPC1-7):H01L21/208 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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