| 摘要 |
PURPOSE:To control a discharge voltage of an ion source to a specified voltage and to form a thin film having uniform quality on a substrate, by controlling the flow rate of a gas to an ion source for projecting an ion beam to the substrate in correspondence to the fluctuation in the set voltage by the voltage fluctuation in a vacuum vessel. CONSTITUTION:A material 19 to be evaporated is evaporated from a vapor source 6 provided in the vacuum vessel 1 having a discharge pipe 3 connected to vacuum pumps 11, 15 and is deposited by evaporation on the substrate 4 disposed to confront said material. The ion beam generated from the ion source 7 having a gas supplying pipe 8 and a DC constant current power supply 21 is projected thereto to form the thin film having the good adhesiveness. An automatic flow rate controller 22 is disposed to the supplying pipe 8 of the thin film bombardment vapor deposition device constituted in the above-mentioned manner. The flow rate of the gas is controlled to maintain the specified discharge voltage of the ion source 7 and to prevent the deterioration of the film quality when the pressure in the vacuum vessel 1 is fluctuated by a getter effect of the material to be deposited by evaporation, etc., and is varied from the set voltage of the above-mentioned power supply 21. Au automatic pressure controller 25 is further preferably disposed to a gas introducing pipe 2 to maintain the specified pressure automatically in the vacuum vessel 1.
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