| 摘要 |
PURPOSE:To obtain an InSb system crystal thin film having an excellent electrical characteristic by giving a limitation on a temperature rise of substrate temperature. CONSTITUTION:An InSb system compound crystal thin film is manufactured by setting a substrate temperature in the initial state of evaporation to a temperature lower than the limit substrate temperature indicated by the expression 1/T=9.98X10<-4>-5.66X 10<-5> log p[here, T is a limit substrate temperature (absolute temperature), P is a degree of vacuum (Torr) during evaporation], and by evaporating the indium and antimony on the substrate by the stair-case substrate temperature rise method. As shown in the figure, in the stair-case substrate temperature rising method, the substrate temperature rise shows a stair-case pattern and a high temperature rise rate time region and a low temperature rise rate time region alternately appear. A substrate temperature rise rate in this region is limited to 5-50 deg.C/min, and when a temperature rise rate is lower than 50 deg.C/min, a width of said AIn/ASb becomes small. If it is larger than 50 deg.C/min, a film is broken or becomes dark. According to this method, a range of AIn/ ASb, which assures formation of a thin film with mobility of 20,000cm<3>/V S or more which ensures excellent utility, is 1.13-1.62 with a width of 0.49, which is wider by two times or more than that of the conventional method. |
