| 摘要 |
PURPOSE:To obtain a highly integrated non-volatile memory by a method wherein a polycrystalline silicon film is arranged as a floating gate through the intermediary of the oxide film on the diode joint where the impurity different from the substrate is diffused. CONSTITUTION:An N type diffused layer 2, a P type diffused layer 3, an oxide film 4, a floating gate 5 comprising polycrystalline silicon film and wiring 6 are formed on an N type substrate 1 making use of the fact that the depletion layer near the diffused layer 3 and the joint withstand voltage are fluctuated by the amount of the electric charge accumulated in the said floating gate while the floating gate is supplied with a part of the joint breakdown current reaching the floating gate due to the higher energy generated depending upon the voltage at that time subject to the current exceeding the specified value. Through these procedures, the highly integrated rewritable non-volatile memory with simple construction may be easily formed. |
