| 摘要 |
PURPOSE:To make it possible to form an ITIMEPROM by a method wherein P-type and N-type regions are formed in a semiconductor film and an intrinsic silicon film is formed thereon. CONSTITUTION:A first insulating film 102 is formed on a semiconductor substrate 101, a first polycrystalline silicon film 103 is formed thereon and a second insulating film 104 is formed thereon. A first contact hole 112 is formed in a part, which is used as an N-type region of a P-N junction diode to be formed afterwards, of the film 104. Then, a second polycrystalline silicon film 105 is formed. A group V element is implanted using an ion-implantation method for turning this film 105 into the N-type region 106 of the P-N junction diode. Then, a resist mask 108 is formed on the part other than that, which is used as a P-type region 107 of the P-N junction diode, of the film 105 for forming the film 105 into the P-type region 107 of the P-N junction diode, a P-type impurity (a group III element) is implanted and that is formed into the P-type region. Then, a third insulating film 113 is formed and a second contact hole 116 is formed. Then, an intrinsic silicon film 114 is formed. |
