| 摘要 |
<p>PURPOSE:To reduce the number of manufacturing processes and to shorten the time required for manufacture by forming an etching stop layer of an Si substrate after a pattern part to be transmission holes is formed in the surface of the Si substrate. CONSTITUTION:An Si pattern of a part to be transmission holes 3 for a charged beam is formed by etching an Si substrate 1, using a resist pattern 2 formed on the surface of the Si substrate as a mask. Next, the whole surface of the Si substrate 1 wherein the transmission holes 3 are formed is covered with a thin film 4. Subsequently, the thin film 4 is etched by using an opening resist pattern 5 formed in a part to be an opening of a transmission mask on the opposite surface side of the Si substrate l, as the mask. Then, the Si substrate 1 is etched with the part of the thin film 4 of an opening pattern for etching protection used as an etching mask. The etching of the part facing the transmission hole 3 stops at a place where it reaches the thin film 4 for stopping the etching which is formed in the bottom part of the transmission hole 3 in the preceding process. By removing the thin film left in the part of the transmission hole 3 thereafter, a transmission mask structure 6 is obtained.</p> |
